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| BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state-of-the-art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications. Main Features: http://onsemi.com * * * * Free Wheeling Diode Built In Flat DC Current Gain Fast Switching Times and Tight Distribution "6 Sigma" Process Providing Tight and Reproducible Parameter Spreads 2 AMPERES 700 VOLTS 25 WATTS POWER TRANSISTOR Two Versions: * BUD43D2-1: Case 369 for Insertion Mode * BUD43D2: Case 369A for Surface Mount Mode MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak (Note 1) Base Current - Continuous Base Current - Peak (Note 1) Symbol VCEO VCBO VCES VEBO IC ICM IB IBM Value 400 700 700 12 2.0 5.0 1.0 2.0 Unit Vdc Vdc Vdc Vdc Adc Adc DPAK CASE 369 STYLE 1 DPAK CASE 369A STYLE 1 MARKING DIAGRAMS YWW BUD 43D2 YWW BUD 43D2 TYPICAL GAIN Typical Gain @ IC = 100 mA, VCE = 1 V @ IC = 0.3 A, VCE = 1 V hFE 55 32 - THERMAL CHARACTERISTICS Characteristic Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Thermal Resistance - Junction-to-Case Thermal Resistance - Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 sec. Symbol PD 25 0.2 TJ, Tstg RqJC RqJA TL -65 to +150 5.0 71.4 260 W W/C C C/W C/W C Value Unit Y = Year WW = Work Week BUD43D2 = Device Code ORDERING INFORMATION Device BUD43D2-1 Package DPAK Shipping 75 Units/Rail 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10% (c) Semiconductor Components Industries, LLC, 2002 1 June, 2002 - Rev. 2 Publication Order Number: BUD43D2/D II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I I I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I III I I I I I I I II I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I II I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I II I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DIODE CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 500 V, VEB = 0) Forward Recovery Time (see Figure 22) (IF = 0.2 Adc, di/dt = 10 A/ms) Forward Diode Voltage (IEC = 0.2 Adc) DC Current Gain (IC = 0.4 Adc, VCE = 1 Vdc) Collector-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 20 mAdc) Base-Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 2 Adc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 1 Vdc) (IC = 1 Adc, IB = 0.2 Adc) (IC = 0.4 Adc, IB = 40 mAdc) (IC = 1 Adc, IB = 0.2 Adc) (IF = 1 Adc, di/dt = 10 A/ms) (IF = 0.4 Adc, di/dt = 10 A/ms) (IEC = 1 Adc) (IEC = 0.4 Adc) (IEC = 0.2 Adc) Characteristic @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 25C @ TC = 25C http://onsemi.com BUD43D2 2 VCEO(sus) Symbol VCE(sat) VBE(sat) VCBO VEBO ICEO IEBO ICES VEC hFE Tfr Min 700 400 10 7.0 8.0IIII 13 20 18 12 - - - - - - - - - - - - - - - - - - - - - - - 0.40 0.60 0.78 0.65 14.5 0.25 0.30 0.20 0.20 0.85 0.76 Typ 340 390 415 920 470 1.1 0.9 0.6 0.8 15 9.5 32 26 - - - - - - 0.65 1.0 Max 50 500 100 50 500 100 1.5 1.2 1.0 0.9 0.8 0.5 0.6 0.4 0.5 1.0 0.9 - - - - - - - - - - - - mAdc mAdc mAdc Unit Vdc Vdc Vdc Vdc Vdc Vdc ns - II I I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIII I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I III I I I I I IIIII I IIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I III I I I I I IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIII I I I I III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I I IIIII I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIIIIIIIIIIIIII I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I IIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIII II I IIIII II I IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) SWITCHING CHARACTERISTICS: Inductive Load SWITCHING CHARACTERISTICS: Resistive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) DYNAMIC CHARACTERISTICS DYNAMIC SATURATION VOLTAGE Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Dynamic Saturation Voltage Input Capacitance (VEB = 8 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) IC = 0.5 Adc, IB1 = 50 mAdc IB2 = 250 mAdc VCC = 300 Vdc IC = 400 mA IB1 = 40 mA VCC = 300 Vdc IC = 1 A IB1 = 200 mA VCC = 300 Vdc IC = 1 Adc, IB1 = 0.2 Adc IB2 = 0.5 Adc 05 VCC = 300 Vdc Characteristic IC = 0.8 Adc IB1 = 160 mAdc IB2 = 160 mAdc IC = 0.4 Adc IB1 = 40 mAdc IB2 = 40 mAdc IC = 0.4 Adc IB1 = 40 mAdc IB2 = 0.2 Adc IC = 1.0 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc @ 3 ms @ 1 ms @ 3 ms @ 1 ms @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C http://onsemi.com BUD43D2 3 VCE(dsat) Symbol Cob Cib ton ton toff toff fT tc ts tc ts tc ts tc ts tf tf tf tf Min 800 - 1.7 - 2.5 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 1300 4.4 12.8 1.05 1.45 0.55 0.7 Typ 110 180 90 105 125 330 150 175 150 400 100 100 100 90 225 600 200 200 250 1.5 1.5 0.5 1.8 0.5 1.3 3.3 6.8 - 2.2 - 2.8 85 80 50 13 1100 - 0.75 - 1.75 - Max 250 - 225 - 250 - 150 - 175 - 150 - 150 - 150 - 300 - 250 - 500 2.0 - 2.8 - 1.5 - 75 - - - - - - - - - MHz Unit pF pF ns ns ns ns ns ns ns ns ns ns ns ms ms ms ms V ms BUD43D2 100 TJ = 125C hFE, DC CURRENT GAIN -20C 25C 10 hFE, DC CURRENT GAIN -20C 25C 10 100 TJ = 125C 1 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain @ VCE = 1 V Figure 2. DC Current Gain @ VCE = 5 V 3 TJ = 25C VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS) 10 2 2A 1.5 A 1 1A 0.4 A IC = 0.2 A 0 0.001 0.01 0.1 1 IB, BASE CURRENT (AMPS) 10 1 TJ = 125C 0.1 -20C 25C 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage IC/IB = 5 100 10 VCE, VOLTAGE (VOLTS) 10 VCE, VOLTAGE (VOLTS) 1 TJ = 125C 0.1 -20C 25C 1 TJ = 125C 0.1 -20C 25C 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector-Emitter Saturation Voltage IC/IB = 10 Figure 6. Collector-Emitter Saturation Voltage IC/IB = 20 http://onsemi.com 4 BUD43D2 10 10 VBE, VOLTAGE (VOLTS) 1 VBE, VOLTAGE (VOLTS) -20C 25C TJ = 125C 1 -20C 25C TJ = 125C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Base-Emitter Saturation Region IC/IB = 5 Figure 8. Base-Emitter Saturation Region IC/IB = 10 FORWARD DIODE VOLTAGE (VOLTS) 10 10 VBE, VOLTAGE (VOLTS) VEC(V) = -20C 1 125C 25C 1 -20C 25C TJ = 125C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.1 0.01 0.1 1 10 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) Figure 9. Base-Emitter Saturation Region IC/IB = 20 Figure 10. Forward Diode Voltage 1000 Cib (pF) C, CAPACITANCE (pF) TJ = 25C f(test) = 1 MHz 1000 BVCER @ ICER = 10 mA 900 TC = 25C BVCER (VOLTS) 800 700 600 500 100 Cob (pF) 10 BVCER(sus) @ ICER = 200 mA, LC = 25 mH 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 400 10 100 RBE 1000 Figure 11. Capacitance Figure 12. BVCER = f(RBE) http://onsemi.com 5 BUD43D2 800 700 600 t, TIME (ms) 500 400 300 200 IC/IB = 5 100 0 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 t, TIME (ms) IBon = IBoff TJ = 125C TJ = 25C 4500 IC/IB = 10 4000 3500 IBon = IBoff VCC = 300 V Pw = 40 ms IC/IB = 10 3000 2500 2000 1500 1000 0 TJ = 125C TJ = 25C VCC = 300 V PW = 40 ms IC/IB = 5 2 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switching, ton Figure 14. Resistive Switching, toff 4 3500 IBon = IBoff, VCE = 15 V, VZ = 300 V LC = 200 mH TJ = 125C, IC/IB = 10 3 t, TIME (ms) TJ = 125C, G5 t, TIME (ms) 3000 2500 TJ = 25C, IC/IB = 10 2 TJ = 25C, G5 IBon = IBoff, VCE = 15 V, VZ = 300 V LC = 200 mH 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 2000 1 1500 1000 0 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 Figure 15. Inductive Storage Time, tsi @ G = 5 Figure 16. Inductive Storage Time, tsi @ IC/IB = 10 3000 700 600 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH tc @ TJ = 125C 2500 t, TIME (ms) t, TIME (ms) TJ = 125C, IC/IB = 20 2000 TJ = 25C, IC/IB = 20 500 400 300 200 100 0 2 0 tc @ TJ = 25C 1500 1000 0.5 IBon = IBoff, VCE = 15 V, VZ = 300 V LC = 200 mH tfi @ TJ = 125C tfi @ TJ = 25C 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 1 1.5 IC, COLLECTOR CURRENT (AMPS) Figure 17. Inductive Storage Time, tsi @ IC/IB = 20 Figure 18. Inductive Fall and Cross Over Time, tfi and tc @ hFE = 5 http://onsemi.com 6 BUD43D2 1000 900 800 t, TIME (ms) 700 600 500 400 300 200 100 0 hFE = 10, TJ = 25C hFE = 20, TJ = 25C IBon = IBoff, VCE = 15 V, VZ = 300 V LC = 200 mH hFE = 20, TJ = 125C hFE = 10, TJ = 125C 2200 2000 1800 1600 t, TIME (ms) 1400 1200 1000 800 600 400 200 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 0 hFE = 10, TJ = 25C 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 hFE = 20, TJ = 25C IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH hFE = 20, TJ = 125C hFE = 10, TJ = 125C Figure 19. Inductive Fall Time, tfi @ hFE = 10 and 20 Figure 20. Inductive Cross Over Time, tc @ hFE = 10 5 tfi, FALL TIME (ns) 4 t, TIME (ms) IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH 700 600 500 400 300 IC = 0.3 A, TJ = 25C IC = 0.3 A, TJ = 25C 200 100 IC = 1 A, TJ = 25C 3 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH IC = 1 A, TJ = 125C IC = 0.3 A, TJ = 125C 3 IC = 1 A, TJ = 125C IC = 1 A, TJ = 25C 2 IC = 0.3 A, TJ = 125C 1 3 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 Figure 21. Inductive Storage Time, tsi Figure 22. Inductive Fall Time, tf 1000 900 CROSS-OVER TIME (ns) 800 700 600 500 400 300 200 100 3 5 IC = 0.3 A, TJ = 25C IC = 0.3 A, TJ = 125C IC = 1 A, TJ = 25C IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH IC = 1 A, TJ = 125C 2700 IB1&2 = 100 mA 2200 t, TIME (ms) IB1&2 = 500 mA IB1&2 = 50 mA IBon = IBoff, VCC = 15 V, VZ = 300 V LC = 200 mH 0 1700 1200 700 200 7 9 11 hFE, FORCED GAIN 13 15 IB1&2 = 200 mA 1 1.5 0.5 2 2.5 IC, COLLECTOR CURRENT (AMPS) 3 Figure 23. Inductive Cross Over Time, tc Figure 24. Inductive Storage Time, tsi http://onsemi.com 7 BUD43D2 10 VCE Dyn 1 ms Dyn 3 ms 0V 90% IB IB 1 ms 3 ms 9 8 7 6 5 4 3 2 1 0 0 TIME 1 2 3 4 TIME 5 6 7 8 IB Vclamp IC tsi 10% Vclamp tc 90% IB1 tfi 90% IC 10% IC Figure 25. Dynamic Saturation Voltage Measurements Figure 26. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W MTP8P10 100 mF VCE PEAK MTP8P10 MPF930 MUR105 RB1 Iout A 50 W 500 mF 150 W 3W MJE210 MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA IB2 Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 VCE IB1 IB IC PEAK MPF930 +10 V COMMON 1 mF -Voff VFRM IC, COLLECTOR CURRENT (AMPS) 10 1 ms 5 ms 1 DC 10 ms 1 ms VFR (1.1 VF) Unless Otherwise Specified VF 0.1 VF tfr 0.1 10% IF 0.01 10 1000 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 27. tfr Measurement Figure 28. Forward Bias Safe Operating Area, Maximum Rating http://onsemi.com 8 EXTENDED SOA IF BUD43D2 2.5 IC, COLLECTOR CURRENT (AMPS) POWER DERATING FACTOR TJ = 125C Gain = 4 LC = 500 mH 1 Second Breakdown Derating 0.8 2 1.5 VBE(off) = -1.5 V 1 VBE(off) = -5 V 0.5 VBE = 0 V 0 200 300 900 400 500 700 800 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.6 0.4 Thermal Derating 0.2 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 29. Reverse Bias Safe Operating Area, Maximum Rating Figure 30. Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second Breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 1 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) 10 100 1000 P(pk) t1 t2 RqJC(t) = r(t) RqJC RqJC = 55C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 DUTY CYCLE, D = t1/t2 Figure 31. Thermal Response http://onsemi.com 9 BUD43D2 Minimum Pad Sizes Recommended for Surface Mounted Applications 1.6 0.063 2.3 0.090 2.3 0.090 6.7 0.265 1.6 0.063 3.0 0.118 1.8 0.070 6.7 0.265 mm inches TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 32 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 6 VENT STEP 7 COOLING 205 TO 219C PEAK AT SOLDER JOINT STEP 1 PREHEAT ZONE 1 RAMP" 200C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 170C 160C 150C 100C 100C 140C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) 50C DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 32. Typical Solder Heating Profile http://onsemi.com 10 BUD43D2 PACKAGE DIMENSIONS DPAK CASE 369A-13 ISSUE AB SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- -T- B V R 4 C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 1: PIN 1. 2. 3. 4. http://onsemi.com 11 BUD43D2 PACKAGE DIMENSIONS DPAK STRAIGHT LEADS CASE 369-07 ISSUE M B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 A 1 2 3 S -T- SEATING PLANE K F D G 3 PL M J H 0.13 (0.005) T STYLE 1: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 BUD43D2/D |
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